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Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence

Identifieur interne : 015F94 ( Main/Repository ); précédent : 015F93; suivant : 015F95

Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence

Auteurs : RBID : Pascal:98-0461844

Descripteurs français

Pascal (Inist)
- 8115H, 7866F, 7860H, 6865, 8105E, Etude expérimentale, Puits quantique semiconducteur, Epitaxie jet moléculaire, Couche épitaxique semiconductrice, Croissance semiconducteur, Cathodoluminescence, Semiconducteur III-V, Indium composé, Gallium composé.

English descriptors

KwdEn :
- Cathodoluminescence, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Molecular beam epitaxy, Semiconductor epitaxial layers, Semiconductor growth, Semiconductor quantum wells.

Abstract

In this work, in situ cathodoluminescence (CL) is presented as a technique to optimize the molecular beam epitaxy (MBE) growth conditions for InGaN films and structures. InGaN was grown at 1 μm/h using a reactive nitrogen rf plasma source at substrate temperatures ranging from 550 to 650 °C. The quick determination of the emission wavelength and quality from the peak position and width allowed various growth conditions and structures to be tried without removal of the sample from the MBE system. CL scans are presented from samples grown under varying Ga/In flux ratios, III/nitrogen flux ratios, and substrate temperatures showing the usefulness of in situ monitoring for MBE InGaN growth.© 1998 American Vacuum Society.

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Pascal:98-0461844

Le document en format XML

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<author><name sortKey="Wowchak, A M" uniqKey="Wowchak A">A. M. Wowchak</name>
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<author><name sortKey="Klaassen, J J" uniqKey="Klaassen J">J. J. Klaassen</name>
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<author><name sortKey="Polley, C" uniqKey="Polley C">C. Polley</name>
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<front><div type="abstract" xml:lang="en">In this work, in situ cathodoluminescence (CL) is presented as a technique to optimize the molecular beam epitaxy (MBE) growth conditions for InGaN films and structures. InGaN was grown at 1 μm/h using a reactive nitrogen rf plasma source at substrate temperatures ranging from 550 to 650 °C. The quick determination of the emission wavelength and quality from the peak position and width allowed various growth conditions and structures to be tried without removal of the sample from the MBE system. CL scans are presented from samples grown under varying Ga/In flux ratios, III/nitrogen flux ratios, and substrate temperatures showing the usefulness of in situ monitoring for MBE InGaN growth.© 1998 American Vacuum Society.</div>
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Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence

Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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Pour manipuler ce document sous Unix (Dilib)

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